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Product Details 基本信息 ISBN-13 书号 9783642059216 Author 作者 Huff Format 版本 平装-胶订 Pages Number 页数 710页 Publisher 出版社 Springer Berlin Heidelberg Publication Date 出版日期 2010-10-21 Language 语种 英语 Book Contents 内容简介 Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology. Topics include: an extensive review of Moore’s Law, the classical regime for SiO2 gate dielectrics; the transition to silicon oxynitride gate dielectrics; the transition to high-K gate dielectrics (including the drive towards equivalent oxi
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