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【预订】Gan Transistors For Efficient Power Conversion, 3Rd Edit 国外库房发货,通常付款后3-5周到货!
Product Details 基本信息 ISBN-13 书号 9781119594147 Author 作者 Alex Lidow Format 版本 精装 Pages Number 页数 384页 Publisher 出版社 Wiley Publication Date 出版日期 2019-08-16 Product Dimensions 商品尺寸 24.4 x 16.8 x 2.3 cm Shipping Weight 商品重量 0.9 kg Language 语种 其它(含多语) Book Contents 内容简介 Gallium nitride (GaN) is an technology promising to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics allowing designers to greatly reduce system power losses, size, weight, and cost. This updated third edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOS
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